同步辐射白光形貌术定量计算晶体的残余应力  

Quantitative Calculation of the Residual Stress in Crystal Based on Synchrotron Radiation White Beam Topography

作　　者：宋生[1] 崔潆心 杨昆[1] 徐现刚[1] 胡小波[1] 黄万霞[2] 袁清习[2] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100 [2]中国科学院高能物理研究所同步辐射实验室,北京100039

出　　处：《人工晶体学报》2013年第12期2515-2519,2531,共6页Journal of Synthetic Crystals

基　　金：国家高技术研究发展计划(863计划)(2011AA050401);国家自然科学基金(51021062;11134006)

摘　　要：提出了一种利用同步辐射白光形貌术定量计算晶体残余应力的方法。晶体的残余应力与晶格畸变之间存在定量关系,衍射斑点的畸变程度可以反映晶格的畸变量,据此可以计算晶体中的残余应力。文中以碳化硅单晶样品残余应力的定量计算作为实例,展示了实验方法和计算过程。结果表明该样品的残余应力以正应力为主。A method for quantitave calculation of the residual stress in crystal materials based on synchrotron radiation white-beam topography was proposed. There is a quantitave relationship between residual stress and lattice distortion, while the distortion of diffraction spot represents the lattice distortion. So the residual stress could be calculated on the basis of experiment results. As an application example, the residual stress in a SiC monocrystal sample were quantitavely calculated. The experiment and calculation process were demonstrated in detail. It was proved that the major residual stress was normal stress in this sample.

关 键 词：同步辐射 白光形貌术 残余应力 碳化硅 

分 类 号：O771[理学—晶体学]