真空蒸镀锗掺杂多晶硅薄膜的研究  

Growth and Characterization of Ge-Doped Polycrystalline Si Thin Films

作　　者：王宙[1] 何旭[1] 付传起[1] 室谷贵之[1] 杨萍[1] 曹健[1] 

机构地区：[1]大连大学表面工程中心,大连116622

出　　处：《真空科学与技术学报》2013年第11期1110-1113,共4页Chinese Journal of Vacuum Science and Technology

摘　　要：为了进一步提高多晶硅薄膜的晶化率,采用真空蒸镀的方法在玻璃衬底上制备了掺杂稀土锗的多晶硅薄膜。用扫描电子显微镜(KYKY-1000B)和显微激光拉曼光谱仪(JY Labram HR 800)分析研究了不同掺杂分数的锗成分对掺锗多晶硅薄膜的表面形貌、组织结构及薄膜晶化率的影响。结果表明:随着锗掺杂分数的增加薄膜表面更加平整、晶粒粒径变大分布更加均匀,晶化率升高;当掺杂分数为1%时,薄膜表面晶粒尺寸可达1μm、晶化率达到87.37%;但当掺杂分数超过1%,镀层表面又变得粗糙、部分晶粒发生变形、晶化率降低。这说明适量锗的掺入可以改善多晶硅薄膜表面平整度,促进薄膜表面晶粒的形成和长大,提高薄膜晶化率。The Ge-doped polycrystalline Si thin films were deposited by vacuum evaporation on glass substrates. The impacts of synthesis conditions on the microstructures of the films were evaluated. The Ge-doped Si films were characterized with scanning electron microscopy and Raman spectroscopy. The results show that the Ge-content strongly affects the microstructures of the Si films. For example,as the Ge-content increased,the surfaces became smoother with more uniformly distributed bigger crystalline grains. The grain size and crystallinity of the films,synthesized at a Ge-content of 1. 0 wt%,were estimated to be 1 μm and 87. 37%,respectively. However,deposited at a Ge-content above 1. 0 wt%,the surfaces became increasingly roughened possibly because of defects formation.

关 键 词：真空蒸镀 多晶硅薄膜 锗掺杂 晶化率 

分 类 号：TB34[一般工业技术—材料科学与工程] O484.1[理学—固体物理]