铝诱导晶化低温制备多晶硅薄膜的机理研究  

Mechanism of Low Temperature Growth of Al-Induced Polycrystalline Si Film

作　　者：王成龙[1] 苗树翻[1] 范多旺[1] 

机构地区：[1]兰州交通大学国家绿色镀膜技术与装备工程技术研究中心,兰州730070

出　　处：《真空科学与技术学报》2013年第11期1139-1143,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家重点基础研究发展计划(973计划)项目(批准号:2012CB626805);国家国际科技合作专项项目(批准号:2011DFA061850)

摘　　要：根据热力学第二定律的Gibbs自由能描述,理论研究了铝诱导晶化(AIC)制备多晶硅薄膜的铝诱导层交换(ALILE)机理。用数学模型描述了ALILE过程中a-Si原子通过Al2O3缓冲层向铝层扩散的动力学过程。在此模型框架下,根据多晶硅薄膜制备过程中退火温度和Al2O3缓冲层的制备条件,对成核之前铝层中硅原子的浓度随时间的变化和成核时间变化的关系进行深入的理论研究,试验验证了理论计算结果;通过透射电子显微镜测量了不同退火温度下的非晶硅微孔深度,根据理论研究计算得到了非晶硅溶解到铝膜中的激活能E A为0.57 eV。The growth of Al-induced polycrystalline silicon films at a low temperature（ ≤577℃） was physically modeled,analytically simulatd,and experimentally evaluated,basde on Gibbs free energy description of the second law of thermodynamics. The Al-induced laver exchange mechanism was found to explain fairly well the dynamic process of the amorphous Si atoms,diffused through the Al2O3 buffer layer into the Al layer. The impacts of the annealing temperature of the poly-Si and the growth condition of the Al2O3 buffer layer on the time evolution of Si content in the Al2O3 buffer layer before its nucleation,and the variations in the Si nucleation time were calculated. The porous depth of the Al-induced poly-Si films,annealed at different temperatures,were characterized with transmission electron microscopy to test the simulated results; and the activation energy of a-Si dissolved into Al was calculated to be 0. 75 eV.

关 键 词：多晶硅薄膜 铝诱导晶化 激活能 

分 类 号：O645.13[理学—物理化学]