GaAs MESFET旁栅效应与旁栅距的关系研究  

Study on the relation between sidegating effect and the distance of side-gate/MESFET of GaAs MESFETs

作　　者：丁干 崔丽娟 丁勇[2] 毛友德[2] 赵福川 夏冠群 

机构地区：[1]山东胶南六汪中学,山东青岛260000 [2]合肥工业大学,安徽合肥230009 [3]中科院上海冶金所,上海200000

出　　处：《半导体情报》2001年第1期58-61,共4页Semiconductor Information

摘　　要：旁栅效应是影响 Ga As器件及电路性能的有害寄生效应。本文研究了旁栅阈值电压 Vth SG与旁栅距 LSG的关系 ,发现 Vth SG的大小与 LSG成正比关系 ,并理论探讨了产生这一现象的机制 ,从而验证了旁栅阈值电压与旁栅距关系的有关理论。Sidegating effect is a harmful parasitic effect to GaAs devices and circuits performance.In this paper we study the relation between the sidegating threshold voltage( V th SG ) and the distance of side gate/MESFET( L SG ),and find that the threshold voltage varies linearly with the distance.This result agrees with earlier experimental results.

关 键 词：旁栅效应 旁栅距 砷化镓 MESFET 声效率晶体管 

分 类 号：TN386[电子电信—物理电子学]