放电功率对VHF-PECVD沉积微晶硅薄膜的生长特性的仿真模拟  

Simulation of Microcrystalline-Si Films Growth by Very High Frequency Plasma Enhanced Chemical Vapor Deposition

作　　者：陈喜平[1] 陈永生[1] 李新利[2] 郝秀利[1] 卢景霄[1] 

机构地区：[1]郑州大学物理工程学院材料物理教育部重点实验室,郑州450052 [2]河南科技大学,洛阳471023

出　　处：《真空科学与技术学报》2014年第1期91-95,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家重点基础研究发展计划(批准号:2011CB201606);国家自然科学基金(批准号:51007082)资助的课题

摘　　要：甚高频等离子体增强化学气相沉积技术是当前高速制备优质微晶硅(μc-Si:H)薄膜的主流方法,其生长机理也一直是研究的热点和难点。本文采用Comsol软件中的等离子模块和Chemkin软件中的AUROR模块相结合的方法,对H2和SiH4混合气体等离子体放电、气相反应和表面生长过程进行了数值模拟,研究了沉积功率对μc-Si:H薄膜沉积速率和结构特性的影响。首先,通过一维的放电模型,获得电子温度和电子浓度等等离子体参数。随后,将该参数带入气相和表面反应模型,得到各种粒子的气相浓度和薄膜的特性参数。模拟过程涉及24个电子碰撞反应、42个气相反应和43个表面反应。同时利用光发射谱对实验过程中等离子辉光特性进行了在线检测,并制备了实验样品。将模拟的SiH3基团、H原子的气相浓度以及它们的比值,生长速率,薄膜中的氢含量和薄膜生长取向等同实验进行了对比,发现能够较好的吻合。The growth of the microcrystalline Si （μc-Si） films by very high frequency plasma enhanced chemical va- por deposition was physically modeled, empirically approximated, and numerically simulated with software packages of Comsol and Chemldn, to understand its growth mechanisms. The impacts of the growth conditions, such as the gas concen- trations of SiH4 and H2, plasma power, and plasma characteristics, on the microstructures of the μc-Si films were evaluat- ed. The plasma characteristics were monitored online with optical emission spectrometry. The simulated results show that the plasma power had a major impact on the growth. The simulated and measured results, such as the ratio of the SiH3 and H concentrations, deposition rate, and preferential growth orientation, were found to be in good agreement.

关 键 词：甚高频等离子体增强化学气相沉积 微晶硅薄膜 模拟 光发射谱 

分 类 号：O472.1[理学—半导体物理] O472.3[理学—物理]