基于SOI工艺的高可靠有源像素研究  

Research on SOI Process Based Active Pixels with High Reliability

作　　者：田犁[1] 苗田乐[2] 危峻[1] 汪辉[2] 

机构地区：[1]中国科学院上海技术物理研究所,上海200010 [2]中国科学院上海高等研究院,上海201210

出　　处：《电子器件》2013年第6期769-773,共5页Chinese Journal of Electron Devices

基　　金：国家科技重大专项02专项项目(2011ZX02505)

摘　　要：基于SOI衬底材料提出了一种新型的CMOS图像传感器有源像素结构,建立了与之相对应的二维器件仿真模型,利用Sentaurus Device仿真工具对该结构的单粒子效应(Single-Event Effects)进行了模拟仿真研究。仿真结果显示在像素周围引入P+重掺杂保护层能够有效隔离像素使受辐射像素相邻像素收集到的噪声电子数减小,证明此像素结构具有一定的抗单粒子辐照性能。A new kind of CMOS Image sensor active pixel structure based on SO1 process is proposed in this paper and the two-dimensional device model of the pixel structure is established. To evaluate the pixel＇s performance,the simulation of the completed single particle effect has been made based on the device model. The simulation result shows that the single particle effect will introduce electrons to the pixels. However, the introduced P＋ heavily doped area between pixels can effectively isolate the pixels and therefore the neighboring pixels will collect less noise electrons, proving that the structure can somehow effectively resist single particle effect.

关 键 词：微电子学与固体电子学 有源像素 P+重掺杂保护层 单粒子效应 电荷分享 

分 类 号：TN43[电子电信—微电子学与固体电子学]