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作 者:张玮[1,2] 满卫东[1] 林晓棋 游志恒[1] 吕继磊[2] 江南[2]
机构地区:[1]武汉工程大学湖北省等离子体化学与新材料重点实验室,湖北武汉430073 [2]中国科学院宁波材料技术与工程研究所,浙江宁波315201
出 处:《硬质合金》2013年第6期332-336,共5页Cemented Carbides
基 金:国家自然科学基金(11175137/A050610)光学级金刚石厚膜沉积过程晶面取向与缺陷控制机理研究
摘 要:本文利用5 kW微波等离子体装置,在直径22 mm的石英上沉积金刚石薄膜。实验研究了衬底在不同位置对沉积金刚石薄膜的质量产生的影响。实验中将2块石英衬底编号为A和B,样品A被放在偏离钼基片台中心5 mm的位置,使石英的中间区域偏离等离子体球,而边缘区域处于等离子体球的下方。通过SEM和拉曼光谱表征所沉积的金刚石膜,对比样品A的中间和边缘区域发现中间的区域金刚石膜的质量差且不均匀,边缘区域则长出取向一致的(100)面金刚石。通过分析认为,较高的温度、大的等离子体密、合适的碳源浓度度等条件有利于(100)面金刚石薄膜的沉积。随后改进工艺,将样品B放在基片台中心使其处于等离子体的正下方,并调整生长温度和甲烷浓度,成功的获得了高质量均匀的(100)面金刚石薄膜。The deposition of diamond thin films on 22 mm quartz by 5 kW microwave-plasma chemical vapor deposition equipment was described in this paper. The effects of substrate position on the quality of the deposited diamond thin films were investigated. There were two quartz marked A and B. Sample A was placed 5 mm from the center of molybdenum substrate and made the central region of the quartz deviate from the plasma ball center, while the edge of the quartz was under the plasma ball. The films were characterized by SEM and Raman Spectroscopy. Results show that the central region of the films are poor quality and uneven, while he edge of the quartz are the uniform (100) diamond films. Through analysis, the higher temperature, high density plasma power and suitable carbon concentration will help deposit (100) diamond films. Then the process was improved. Sample B was placed on the center of molybdenum substrate and the growth temperature and methane concentration were adjusted. Uniform (100) diamond films with good quality are successfully obtained.
分 类 号:TG174.44[金属学及工艺—金属表面处理]
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