槽栅NMOSFET结构与性能仿真  

Simulation on Structure and Performance of Grooved-Gate NMOSFET

作　　者：任红霞[1] 郝跃[1] 许冬岗[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《Journal of Semiconductors》2001年第2期234-240,共7页半导体学报（英文版）

基　　金：国防预研基金资助项目!(99J8.1.1.DZD13 2 )&&

摘　　要：基于流体动力学能量输运模型 ,利用二维器件模拟器 MEDICI对深亚微米槽栅 NMOSFET器件的结构参数 ,如结深、凹槽拐角及沟道长度等对器件性能的影响进行了仿真研究 ,并与相应的常规平面器件特性进行了对比 .研究表明在深亚微米范围内 ,槽栅器件能够很好地抑制短沟道效应和热载流子效应 ,但电流驱动能力较平面器件小 。The effects of structure on the performance of deep sub micron NMOSFET have been studied based on the hydrodynamic model by two dimensional device simulator MEDICI and compared with those of the counterpart conventional planar device.The simulated structure parameters include the junction depth,concave corner and channel effective length.Simulation results prove that grooved gate device can deeply suppress the short channel effect and hot carrier effect even in the deep sub micron region,but its current drive ability is smaller than that of a planar device.The simulation also indicates that the performance is strongly influenced by the concave corner and channel length of the grooved gate MOSFET.

关 键 词：槽栅NMOSFET 结构参数 场效应晶体管 仿真 结构 性能 

分 类 号：TN402[电子电信—微电子学与固体电子学]