SOI技术——21世纪的硅集成技术  

Silicon-On-Insulator: Si Integration Technology in the 21st Century

作　　者：伍志刚[1] 凌荣堂[1] 

机构地区：[1]中国科学院电子学研究所,北京100080

出　　处：《微电子学》2001年第1期1-5,共5页Microelectronics

摘　　要：SOI技术作为 2 1世纪的硅集成技术 ,越来越受到人们的关注。文章从寄生电容、闭锁效应、热载流子效应、体效应及辐射效应等几个方面详细讨论了 SOI器件对体硅器件的优势 ,并讨论了当前As a silicon integration technology in the 21st century, silicon on insulator (SOI) has become more and more attractive The superiority of SOI devices over bulk Si devices is analyzed in detail, with regard to parasitic capacitance, latch up effect, hot carrier effect, bulk effect and radiation effect Current research subjects of SOI technology are examined and its development trend in the future is discussed

关 键 词：SOI SIMOX 硅集成技术 微电子 

分 类 号：TN405[电子电信—微电子学与固体电子学]