硅基PZT铁电薄膜的制备与性能研究  

Preparation and characterization of silicon-based ferroelectric PZT thin films by Sol-Ge process

作　　者：张林涛[1] 任天令[1] 张武全[1] 刘理天[1] 李志坚[1] 

机构地区：[1]清华大学微电子所,北京100084

出　　处：《半导体技术》2001年第1期49-52,共4页Semiconductor Technology

基　　金：国家自然科学基金(69806007)

摘　　要：用溶胶－凝胶（Ｓｏｌ－Ｇｅｌ）方法制备了硅基Ｐｂ（Ｚｒ＿０．５３Ｔｉ＿０．４７）０＿３（ＰＺＴ铁电薄膜。分析了ＰＺＴ铁电薄膜的表面形貌、晶化程度、界面状态等性质。基于上述分析结果提出并实现了低温退火处理制备有ＰＴ过渡层的ＰＺＴ铁电薄膜的工艺流程。测试了低温制备的ＰＺＴ铁电薄膜的Ｃ－Ｖ、漏电等电性能，发现在Ｓｏｌ－Ｇｅｌ法制备ＰＺＴ铁电薄膜的工艺中加入ＰＴ过渡层，有助于提高ＰＺＴ薄膜的品质。Ferroelectric Pb(Zr0.53Ti0.47)O3(PZT) thin films were grown on silicon-based substrates by Sol-Gel method. The surface, crystallization and interface of PZT thin films were analyzed. Based on the results to prepare PZT thin films with PT buffer layers at low annealing temperature was realized. Electrical properties such as C-V and leakage current characteristics of the films were investigated. Experimental results showed that PT buffer layer is helpful to improve the dielectric and ferroelectric properties of the PZT thin films.

关 键 词：SOL-GEL法 PZT PT 铁电薄膜 

分 类 号：TN304.9[电子电信—物理电子学]