Poly-Si TFT弱反型区表面势分布研究  

Research on the Distribution of the Surface Potential for Poly-Si TFTs in the Weak Inversion Region

作　　者：朱臻[1] 

机构地区：[1]苏州市职业大学电子信息工程学院,江苏苏州215104

出　　处：《山西大学学报（自然科学版）》2014年第1期86-90,共5页Journal of Shanxi University(Natural Science Edition)

摘　　要：研究了弱反型时多晶硅薄膜晶体管表面势的分布。考虑到弱反型时,沟道势对表面势的影响可忽略,利用一维泊松方程,得到相应沿沟道方向任一点的表面势模型。通过将基于此模型的表面势二维分布与二维器件仿真结果进行比较,发现弱反型时,其可逼近二维器件中的表面势分布;并发现分别在相异栅电压,相异漏端电压和相异沟道长度时,弱反型时的表面势与其在沟道中所处的相对位置几乎无关。The distribution of the surface potential for polycrystalline silicon thin film transistors in the weak inversion region is studied. In the weak inversion region,the channel potential has no impact on the surface potential. Therefore,the corresponding surface potential model at any point along the channel can be derived by solving one-dimensional Poisson^s equation in this region. By comparing the two-dimensional surface potential distribution based on this model with the two-dimensional-device simulation results, it is found that in the weak inversion region,it can approach the distribution of the surface potential in the two- dimensional device. Moreover, in the weak inversion region, the surface potential is almost independent on its relative position along the channel under various gate voltages, drain voltages and channel lengths re- spectively.

关 键 词：多晶硅薄膜晶体管 弱反型区 表面势 二维分布 

分 类 号：TN325[电子电信—物理电子学]