Y掺杂对BaTiO_3系半导化薄膜PTCR特性的影响  

Effect of Yttrium Content on the PTCR Characteristics of BaTiO_3 Semiconductive Thin Film

作　　者：沈良[1] 曲风钦[2] 宋世庚[1] 

机构地区：[1]中国科学院新疆物理研究所,新疆乌鲁木齐830011 [2]烟台大学物理系,山东烟台264005

出　　处：《功能材料》2001年第1期53-54,共2页Journal of Functional Materials

基　　金：西部之光基金资助项目

摘　　要：介绍了Y掺杂对BaTiO3 系半导化薄膜PTCR特性的影响。实验发现 ,当Y掺杂浓度在 0 .1mol%～ 1.5mol%时 ,薄膜的室温电阻为 10～ 5 0Ω ,突变温区为 1℃。在 [Y3 + ] =0 .7mol%时 ,薄膜的升阻比达 10 6。实验结果表明 :薄膜的转变温度、升阻比和室温电阻与Y掺杂浓度有关。The paper reported the effect of yttrium content on the PTCR characteristics of BaTiO3 semiconductive thin films. When the yttrium content is (0.1-0.5) mol%, the room temperature resistance is only about 10-50Ω, and the temperature range of resistance sharp change is only about 1°C. The resistance ratio reaches 106 at 0.7 mol% for yttrium content. The experimental results show that the room temperature resistance, the Curie temperature and resistance ratio are dependent on the yttrium content.

关 键 词：PTCR 掺杂浓度 钇掺杂 钛酸钡 半导体薄膜 

分 类 号：TN304.055[电子电信—物理电子学]