1700V/100A平面型NPT-IGBT静态特性研究  

The Research on Static Characteristics of a 1 700V/100A Planar NPT-IGBT

作　　者：高明超 刘隽[2] 赵哿 刘江 金锐 于坤山 包海龙[2] 

机构地区：[1]国网智能电网研究院电工新材料与微电子研究所,北京100192 [2]国网上海市电力公司,上海200122

出　　处：《固体电子学研究与进展》2014年第1期81-85,共5页Research & Progress of SSE

基　　金：国家电网公司科技项目(SGRI-WD-91-12-001;SGRI-WD-71-13-006;SGRI-WD-71-13-007);院2012年储备库项目(SGRI-WD-81-12-003;SGRI-WD-81-12-002)

摘　　要：基于现有工艺平台设计一款1700V／100A非穿通型绝缘栅双极晶体管器件（Nonpunchthrough insu—latorgatebipolartransistor，简称NPT-IGBT），元胞采用平面型结构，元胞注入采用自对准工艺，背发射极采用透明集电极技术，对其静态特性进行工艺仿真。仿真结果显示，调整P阱注入剂量及P阱推结时间可以改变器件的阈值电压，调整P阱及背面P^＋集电极注入剂量可以改变器件的饱和电压。将此设计进行流片验证，结果显示击穿电压在2100V以上，饱和压降在2．5～2．7V之间，阈值电压在3．9～5．9V之间，实测值和仿真值相差不大，在误差接受范围之内。A 1 700 V/100 A Non Punch Through Insulator Gate Bipolar Transistor （NPT-IG- BT） based on the existing technology platform was designed by process simulation, which had an internal transparent collector and a planar cell structure. The static characteristics were studied. The simulation results show that the threshold voltage of the device can be adjusted by changing the injection dose or the drive-in time of the P-well. The saturation voltage of the device can be adjusted by changing injection dose of the P-well or the internal transparent collector. This device was fabricated using the self aligned process, and the test results show that the breakdown volt- age is more than 2 100 V, the saturation voltage is between 2.5 V and 2.7 V, the threshold volt- age is between 3.9 V and 5.9 V, which are all similar to the simulation results.

关 键 词：绝缘栅双极晶体管 元胞 击穿电压 阈值电压 饱和压降 

分 类 号：TN322.8[电子电信—物理电子学]