氧化锌n型导电机理研究进展  

Research Progress on Conductive Mechanism of n-type ZnO

作　　者：郭保智[1] 刘永生[1] 房文健[1] 徐娟[1] 武新芳[1] 彭麟[1] 

机构地区：[1]上海电力学院太阳能研究所,上海200090

出　　处：《硅酸盐通报》2014年第1期107-111,共5页Bulletin of the Chinese Ceramic Society

基　　金：国家自然科学基金(11374204);上海市科委重点项目(12JC1404400;11160500700)

摘　　要：氧化锌是一种宽禁带半导体,在太阳能、光电显示等方面有广泛的应用。制约其应用的是p型氧化锌很难得到,其中一个原因在于本征氧化锌n型导电的原因不明确。本文综述了氧化锌n型导电的机理,重点分析了本征缺陷和非故意掺杂氢对氧化锌n型导电的影响。ZnO is a wide gap band semiconductor, which has been used widely in solar energy, optical display and many other aspects. It is difficult to make p type ZnO that limits the application of ZnO. One reason is that we do not know the origin of n-type ZnO clearly. This article reviews two main reasons due to the n-type conductivity. One is the native defect, the other is unintentionally incorporated.

关 键 词：氧化锌 n型导电 本征缺陷 非故意掺杂 

分 类 号：O47[理学—半导体物理]