快速晶闸管通态特性的改善  

Improvement on on-State Characteristics of Fast Switching Thyristor

作　　者：刘国辉 田石 

机构地区：[1]锦州天维电子有限公司,辽宁锦州121001

出　　处：《半导体技术》2014年第3期188-192,共5页Semiconductor Technology

摘　　要：从协调快速晶闸管主要参数之间矛盾关系、降低功率损耗以及并联均流应用等方面,论述了改善快速晶闸管通态特性的重要意义。在影响晶闸管通态压降的主要因素中,着重分析了提高晶闸管j3结的注入比降低通态压降的机理。为获得比较理想的杂质浓度分布,增大j3结两侧杂质浓度的比值,在快速晶闸管的制造中,p型扩散工艺采用了固态源闭管式镓铝双质掺杂技术。研究结果表明:采用该技术制造的快速晶闸管,通态基本特性参数具有较好的一致性,通态压降明显降低,通态特性明显改善,关断时间与通态压降的关系也得到了合理的协调,提高了器件的综合电气性能。The importance of improving the fast switching thyristor on-state characteristics was discussed in coordinating contradictory of the fast switching thyristor major parameters, reducing power loss and application in parallel current sharing. The mechanism of inproving the thyristor j3 injection ratio to reduce the on-state voltage was analyzed mainly in the main factors which affected .the thyristor on-state voltage. In order to obtain the ideal distribution of impurity concentration for increasing the impurity concentration ratio of two sides of i.. by using solid state source closed-tube diffusion process, p type Ga-Al double-impurity doping was applied in fabricating the fast switching thyristor. The results show that the characteristics parameters of fast switching thyristor on-state have the better consistency by using this technology. Their on-state voltage are reduced obviously, and the on-state properties are improved significantly. Their on-state characteristics and comprehensive electrical properties are improved obviously. The relation between turn-off time and on-state voltage has reasonably coordinated.

关 键 词：快速晶闸管 通态特性 镓铝双质掺杂 杂质浓度分布 注入比 

分 类 号：TN34[电子电信—物理电子学]