纳米晶SnO_(2)透明导电薄膜的研制  

Study of nanocrystalline SnO_(2) transparent conducting film

作　　者：王占和[1] 郝群[2] 祝侃[1] 

机构地区：[1]北京理工大学电子工程系,北京100081 [2]北京理工大学光电工程系,北京100081

出　　处：《光学技术》2001年第1期22-23,26,共3页Optical Technique

基　　金：国家留学回国人员科研启动基金资助项目(367-3)

摘　　要：阐述了金属氧化物透明导电薄膜研究的发展情况及其应用前景。介绍了采用磁控溅射技术 ,使用混合气体Ar和O2 ,在衬底温度为 15 0～ 40 0℃的耐热玻璃基片上制备纳米晶SnO2 :Sb透明导电薄膜 ,通过测定X射线衍射谱 ,表明薄膜择优取向为 [110 ]和 [2 11]方向。测量了SnO2 :Sb薄膜的导电特性随衬底温度及氧分压的变化。光学特性测量结果表明薄膜具有较高的透过率。Antimony doped nanocrystalline Tin oxide transparent conducting films grown by dc magnetron sputtering in a mixture gas of Ar and O 2, and substrate temperature 150～400℃ The films were characterized by X ray diffracting The films showed preferred orientation in [110] or [211] plane The conductivity of films depends on the substrate temperature and Ar/O 2 The optical properties were studied by resistivity and transmittance The research and application prospects of metallic oxide transparent conducting films were reviewed too

关 键 词：磁控溅射 SNO_(2)薄膜 导电特性 光学透过率 

分 类 号：TN304.21[电子电信—物理电子学]