共溅射法制备Cu掺杂ZnO薄膜结构及性能的研究  

Study on the structure and properties of Cu-doped ZnO films prepared by co-sputtering

作　　者：郝嘉伟[1] 叶伏秋[1] 肖立娟[1] 李长山[1] 赵鹤平[1] 

机构地区：[1]吉首大学物理与机电工程学院,湖南吉首416000

出　　处：《真空》2014年第2期44-47,共4页Vacuum

基　　金：国家自然科学基金(11264011);省自然科学基金(13A077);湖南省研究生科研创新项目(JGY201223)

摘　　要：采用直流与射频双靶共溅射的方法在玻璃衬底上制备Cu掺杂的ZnO薄膜,并研究了Cu的溅射功率以及氧分压对薄膜结构和光电性能的影响,利用X射线衍射仪(XRD)、紫外可见光分光光度计(UV-VIS)以及霍尔测试仪(HALL8800)分别对样品的结构、光学特性以及电学特性进行表征,结果表明,薄膜的结晶质量随Cu溅射功率的增大有所提高,超过一定范围开始降低,而透过率则一直减小,增大氧分压可以改善样品的透过率。Cu的掺入使薄膜发生了由n型向p型的转变,且富氧条件下有利于这种转变。We used double target co-sputtering of DC and RF to prepare Cu-doped thin ZnO films , and the effects of sputtering power and oxygen partial pressure on the film structure and photoelectric properties were studied . Structure , optical and electrical characteristics of the samples were characterized with XRD , UV-VIS , and HALL8800 . As the results show , the crystal quality of the film first increase with the increase of the Cu sputtering power , and then decrease , while the transmittance keeps decreasing . The transmittance of samples can be improved by increasing the oxygen partial pressure . Doping Cu transforms n-type film to p-type , and enriched oxygen conditions can benefit such transformations .

关 键 词：ZNO薄膜 共溅射 CU掺杂 光电性能 P型 

分 类 号：O472.8[理学—半导体物理] O484[理学—物理]