中频磁控溅射TiAlN薄膜的制备与性能研究  

Preparation and properties of TiAlN film by MF magnetron sputtering

作　　者：谭刚[1] 赵广彬[1] 廖凤娟[1] 罗磊[1] 安小建 何迪[1] 

机构地区：[1]西华大学材料科学与工程学院,四川成都610039

出　　处：《真空》2014年第2期56-59,共4页Vacuum

基　　金："高档数控机床与基础制造装备"科技部重大专项(2009ZX04012-23)资助;四川省特种材料及制备技术重点实验室经费资助

摘　　要：采用中频非平衡磁控溅射离子镀技术在硬质合金基体YG6上制备TiAlN薄膜。利用XRD、EDS、体式显微镜、显微硬度仪和多功能材料表面性能测试仪等对其组织结构以及性能进行了研究分析。结果表明:低Al靶功率时,膜层以TiN、TiC形式存在,TiN的择优取向面(111),显微硬度与偏压有关;高Al靶功率时,膜层主要存在Ti3AlN、AlN相,Ti3AlN相沿(220)晶面择优取向;膜层结构致密均匀,N原子与金属原子比接近1:1;膜层厚度为1.93μm;显微硬度3145HV;结合力85N。TiAlN films were deposited on the cemented carbide YG6 substrates by medium frequency unbalanced magnetron sputtering deposition process . The film ’ s organizational structure and performance were investigated by XRD , EDS , stereo microscope , microhardness tester , multifunctional material surface performance tester and so on . The results showed that： the films exist in TiN , TiC phases with low Al target power , the preferred orientation of TiN is （111）, and the microhardness is depended on bias;the films exists in Ti3AlN,AlN phases with high Al target power,the preferred orientation of Ti3AlN is （220）;the film structure is compact and uniform , the ratio of the nitrogen atoms and metal atoms is closed to 1：1;the film thickness is 1 . 93μm; the microhadness is 3145HV;the binding force is 85N .

关 键 词：TIALN薄膜 非平衡磁控溅射 中频溅射 

分 类 号：TM28[一般工业技术—材料科学与工程]