RF溅射的SiO_2和SiO_2/Al/SiO_2薄膜的喇曼散射光谱研究  

A Raman Study of RF Sputtering SiO_2 and SiO_2 / Al/ SiO_2Films

作　　者：徐知三[1] 邓玲[1] 周正国[1] 王小华[1] 

机构地区：[1]武汉大学,430072

出　　处：《光散射学报》1991年第1期50-55,共6页The Journal of Light Scattering

摘　　要：用射频溅射(RF Sputtering)法制成了SiO_2和SiO_2/Al/SiO_2薄膜。应用喇曼光谱研究了薄膜结构。结果表明:RF溅射制成的SiO_2薄膜是含有大量环结构缺陷的玻璃态;SiO_2/Al/SiO_2层状薄膜的喇曼光谱中观察到Al_2O_3的特征峰,证实了Al/SiO_2薄膜界面确有氧化还原反应发生;从喇曼光谱中Al_2O_3的特性峰的位置和相对强度可推断出,SiO_2/Al/SiO_2薄膜界面处的Al_2O_3是非晶γ-Al_2O_3。SiO_2 and SiO_2 / Al / SiO_2 films have been made by means of RF Sputter in our study. Raman scattering has been used to study these films. It has been found that the Raman spectra of RF sputtering SiO_2 films possess the general features of the spectrum of vitreous SiO_2(V-SiO_2), however, with a lot of ring defects in the RF sputtering SiO_2 films. The Raman spectra of RF sputtering SiO_2/ Al/ SiO_2 films have a vibrational band of the amorphous Al_2O_3 which shows that Al has been oxidized and SiO_2 has been reduced. It can be inferred from these spectra that the Al_2O_3 is the amorphous γ-Al_2O_3 in the interface of SiO_2/Al/SiO_2 films

关 键 词：射频溅射 SIO2 薄膜 散射谱 

分 类 号：O484.1[理学—固体物理]