一种高压集成电容结构的可靠性研究  

Study on Reliability of a High Voltage Integrated Capacitor Structure

作　　者：王坤[1,2] 谭开洲[2] 唐昭焕[2] 殷万军[1,2] 罗俊[3] 黄磊[3] 王斌[3] 

机构地区：[1]重庆邮电大学,重庆400065 [2]模拟集成电路重点实验室,重庆400060 [3]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2014年第1期115-117,126,共4页Microelectronics

摘　　要：针对一种下极板独立的700V高压集成电容,进行了瞬态可靠性研究。研究表明,随着电容下极板尺寸的增加,电容的瞬态可靠性下降。用器件仿真软件MEDICI计算得出,在瞬态电压上升沿为200ns的情况下,电容下极板最大可靠宽度为124μm;同时,还得出一系列上升沿时间小于200ns的电容结构下极板最大可靠宽度。Transient reliability of a high voltage integrated capacitor with independent lower plate operating at 700 V was investigated. It has been demonstrated that transient reliability of the capacitor declined as its lower plate size increased. Results from MEDICI simulation indicated that the maximum safe width of the capacitor~ s lower plate was 124 μm for transient voltage rising edge of 200 ns, and a series of maximum safe width for capacitors with transient voltage rising edge less than 200 ns were also calculated.

关 键 词：高压集成电路 电容 可靠性 

分 类 号：TN406[电子电信—微电子学与固体电子学]