针对存储器单粒子效应的测试系统设计  

A Novel Memory Testing System Focused on Single-Event Effect

作　　者：王雷[1] 蒋见花[1] 谢朝辉[1] 周玉梅[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《核电子学与探测技术》2013年第12期1519-1522,1436,共5页Nuclear Electronics & Detection Technology

基　　金：国家科技重大专项(2009ZX02306-003;2009ZX02305-013)

摘　　要：根据新形势下存储器单粒子试验的特点,基于FPGA和虚拟仪器相结合的方式设计了一款针对存储器单粒子效应的测试系统。该系统改进了传统测试系统中试验数据的回传方式,能够较好地监测和应对单粒子闩锁(SEL)效应,并能够将单粒子瞬态效应(SET)和单粒子翻转(SEU)区分出来。该测试系统还可以根据存储器的不同进行灵活地配置,并经过实际的单粒子效应测试验证了本系统的可靠性。The memory cells fabricated with smaller technology node are faster and have different single -event effect attribute than the previous generation .A new memory testing system has been designed to fulfill the de-mand to test the memory＆#39;s single-event effect completely and efficiently based on the FPGA and the LabVIEW virtual instrument .The testing system can be configured flexibly according to the memory under test , and has been verified in real single -event testing .

关 键 词：单粒子效应 存储器测试 虚拟仪器 

分 类 号：V443[航空宇航科学与技术—飞行器设计]