双沟4H-SiC MESFET优化结构的解析模型及性能  

Analytical Model and Performance of Optimized Dual-channel 4H-SiC MESFETs

作　　者：游娜[1] 张现军[1] 

机构地区：[1]青岛科技大学自动化与电子工程学院,青岛266042

出　　处：《计算物理》2014年第1期103-108,共6页Chinese Journal of Computational Physics

基　　金：青岛科技大学人才引进基金资助项目

摘　　要：优化双沟4H-SiC MESFET结构,通过求解一维和二维泊松方程,建立优化结构的解析模型,分析这种结构的直流和交流特性.结果表明,饱和电流密度的计算结果与实验一致,结构优化后4H-SiC MESFET的饱和电流密度和击穿电压分别为420μA·μm-1和155 V,明显高于优化前的275μA·μm-1和141 V;最高输出功率密度为7.4 W·mm-1,比优化前提高约64%;截止频率和最高振荡频率比优化前略微提高.双沟结构经优化后其交流小信号特性未退化而功率特性获得明显改善.Dual-channel 4H-SiC MESFET is optimized for high power microwave applications. Physics-based analytical models for the device are obtained by solving one- and two-dimensional Poisson＇ s equations. Direct-current （DC） and alternating-current （AC） performances of the 4H-SiC MESFET are calculated. The result is in agreement with experimental data. Calculated maximum saturation current density and breakdown voltage are about 420μA·μm^-1 and 155 V, respectively, which are greater than those of dual-channel structure, 275 μA·μm^-1 and 141 V. Resultant maximum output power density is 7.4 W· mm^-1, which is 64% higher than that of dual-channel structure. Cutoff frequency and the maximum oscillation frequency are slightly improved. The power performance is significantly improved while its AC characteristics are not degraded.

关 键 词：4H—SiC MESFETS 泊松方程 

分 类 号：TN302[电子电信—物理电子学]