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MESFETS: 作品数：24被引量：21H指数：3; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：张玉明张义门杨瑞霞吕红亮张绵更多>>; 相关机构：西安电子科技大学电子科技大学河北工业大学电子部更多>>; 相关期刊：《Chinese Physics B》《计算物理》《Science China(Technological Sciences)》《电子器件》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国防科技技术预先研究基金河北省自然科学基金更多>>

双沟4H-SiC MESFET优化结构的解析模型及性能被引量：1: 《计算物理》2014年第1期103-108,共6页游娜张现军; 青岛科技大学人才引进基金资助项目; 优化双沟4H-SiC MESFET结构,通过求解一维和二维泊松方程,建立优化结构的解析模型,分析这种结构的直流和交流特性.结果表明,饱和电流密度的计算结果与实验一致,结构优化后4H-SiC MESFET的饱和电流密度和击穿电压分别为420μA·μm-1和15...; 关键词：4H—SiC MESFETS 泊松方程

Polycrystalline diamond MESFETs by Au-mask technology for RF applications被引量：3: 《Science China(Technological Sciences)》2013年第4期957-962,共6页FENG ZhiHong WANG JingJing HE ZeZhao DUN ShaoBo YU Cui LIU JinLong ZHANG PingWei GUO Hui LI ChengMing CAI ShuJun; Metal-semiconductor field effect transistors (MESFETs) were fabricated on H-terminated polycrystalline diamond.The DC characteristics of the p-channel MESFET showed a maximum drain current density of 204 mA/mm at a ga...; 关键词：DIAMOND wide band gap semiconductors carbon based electronics semiconductor devices RF performances

High-power SiC MESFET using a dual p-buffer layer for an S-band power amplifier被引量：1: 《Chinese Physics B》2013年第1期491-494,共4页邓小川孙鹤饶成元张波; Project supported by the National Natural Science Foundation of China (Grant No. 61076072); A silicon carbide （SIC） based metal semiconductor field effect transistor （MESFET） is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to ...; 关键词：dual p-buffer layer silicon carbide MESFETS electron confinement

Neutron radiation effect on 4H-SiC MESFETs and SBDs被引量：1: 《Journal of Semiconductors》2010年第11期29-32,共4页张林张义门张玉明韩超; Project supported by the National Natural Science Foundation of China(No.60606022);the Innovation Engineering of Shaanxi Province, China(No.2008ZDKG-30);the Advanced Research Foundation of China(No.9140A08050508);the Special Fund for Basic Scientific Research of Central Colleges,Chang'an University,China(No.CHD2010JC054); 4H-SiC metal Schottky field effect transistors（MESFETs） and Schottky barrier diodes（SBDs） were irradiated at room temperature with 1 MeV neutrons.The highest neutron flux and gamma-ray total dose were 1×1015 n/cm...; 关键词：silicon carbide metal semiconductor field effect transistor Schottky barrier diode neutron radiation

Light Effect in Photoionization of Traps in GaN MESFETs: 《Journal of Electronic Science and Technology of China》2010年第1期51-54,共4页Hadi Arabshahi A.Binesh; Trapping of hot electron behavior by trap centres located in buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simulation. The simulated results show the trap centres are res...; 关键词：Buffer layer current collapse drain current photoionization.

Physical simulations and experimental results of 4H-SiC MESFETs on high purity semi-insulating substrates: 《Chinese Physics B》2009年第10期4474-4478,共5页陈刚柏松李哲洋吴鹏陈征韩平; In this paper we report on DC and RF simulations and experimental results of 4H-SiC metal semiconductor field effect transistors （MESFETs） on high purity semi-insulating substrates. DC and small-signal measurements ...; 关键词：4H-SIC MESFET SIMULATION MICROWAVE

Improved dual-channel 4H-SiC MESFETs with high doped n-type surface layers and step-gate structure: 《Journal of Semiconductors》2009年第7期39-43,共5页邓小川张波李肇基张有润; supported by the State Key Development Program for Basic Research of China(No.51327010101); An improved dual-channel 4H-SiC MESFET with high doped n-type surface layer and step-gate structure is proposed, and the static and dynamic electrical performances are analyzed.A high doped n-type surface layer is app...; 关键词：high doped surface layer step-gate 4H-SiC MESFETs

Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs: 《Chinese Physics B》2009年第7期3018-3023,共6页邓小川冯震张波李肇基李亮潘宏菽; Project supported by Major State Basic Research Development Program of China (Grant No 51327010101); This paper reports that multi-recessed gate 4H-SiC MESFETs （metal semiconductor filed effect transistors） with a gate periphery of 5-mm are fabricated and characterized.The multi-recessed region under the gate termi...; 关键词：multi-recessed microwave power 4H-SiC MESFETs

A new physics-based self-heating effect model for 4H-SiC MESFETs: 《Chinese Physics B》2008年第12期4622-4626,共5页曹全君张义门张玉明; Project supported by the National Defense Foundation of China (Grant No 51327010101);the National Natural Science Foundation of China (Grant No 60606022); A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design （CAD） oriented drain current model. The circuit oriented expressions of 4H-SiC low-f...; 关键词：4H silicon carbide metal semiconductor field effect transistor self-heating effect com puter aided design

Improved empirical DC I-V model for 4H-SiC MESFETs被引量：1: 《Science in China(Series F)》2008年第8期1184-1192,共9页CAO QuanJun ZHANG YiMen ZHANG YuMing LV HongLiang WANG YueHu TANG XiaoYan GUO Hui; the National Defense Basic Research Program of China(Grant No.51327010101); A novel empirical large signal direct current （DC）Ⅰ-Ⅴ model is presented considering the high saturation voltage, high pinch-off voltage, and wide operational range of drain voltage for 4H-SiC MESFETs. A compariso...; 关键词：4H-SiC MESFET DC Ⅰ-Ⅴ characteristics empirical model Levenberg-Marquardt method nonlinear regression

MESFETS