Multistage interband cascade photovoltaic devices with a bandgap of 0.23 eV operating above room temperature  

作　　者：Hao Ye Hossein Lotfi Lu Li Robert T.Hinkey Rui Q.Yang Lin Lei Joel C.Keay Matthew B.Johnson Tetsuya D.Mishima Michael B.Santos 

机构地区：[1]School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK, USA [2]Homer L. Dodge Department of Physics and Astronomy,University of Oklahoma, Norman, OK, USA

出　　处：《Chinese Science Bulletin》2014年第10期950-955,共6页

基　　金：supported in part by the DoE EPSCoR program(DESC0004523);C-SPIN,the Oklahoma/Arkansas MRSEC(DMR0520550)

摘　　要：Interband cascade(IC)photovoltaic(PV)device structures,consisting of multiple discrete InAs/GaSb superlattice absorbers sandwiched between electron and hole barriers,were grown by molecular beam epitaxy.Details of the molecular beam epitaxy growth and material characterization of the structures are presented.The discrete absorber architecture enables certain advantages,such as high open-circuit voltage,high collection efficiency,high operating temperature,and smooth integration of cascade stages with different bandgaps.The two-and three-stage ICPV devices presented in this article operate at room temperature with substantial open-circuit voltages at a cutoff wavelength of 5.3 lm(corresponding to a bandgap of 0.23 eV),the longest ever reported for room temperature PV devices.The device characteristics indicate a high level of current matching and demonstrate the advantages of the interband cascade approach in thermophotovoltaic cell design.Interband cascade （IC） photovoltaic （PV）device structures, consisting of multiple discrete InAs/GaSb superlattice absorbers sandwiched between electronand hole barriers, were grown by molecular beam epitaxy.Details of the molecular beam epitaxy growth and materialcharacterization of the structures are presented. The dis-crete absorber architecture enables certain advantages, suchas high open-circuit voltage, high collection efficiency,high operating temperature, and smooth integration ofcascade stages with different bandgaps. The two- andthree-stage ICPV devices presented in this article operate atroom temperature with substantial open-circuit voltages ata cutoff wavelength of 5.3 μm （corresponding to a bandgapof 0.23 eV）, the longest ever reported for room temperaturePV devices. The device characteristics indicate a high levelof current matching and demonstrate the advantages of theinterband cascade approach in thermophotovoltaic celldesign.

关 键 词：INAS GASB SUPERLATTICE THERMOPHOTOVOLTAIC Interband cascade devices 

分 类 号：O469[理学—凝聚态物理]