分数维方法研究Al_xGa_(1-x)As衬底上GaAs薄膜中极化子特性随Al浓度的变化  

VARIATION OF EFFECT OF POLARON IN GAAS FILM DEPOSITED ON Al_xGa_(1-x) As SUBSTRATE WITH ALUMINUM CONCENTRATION

作　　者：严亮星[1] 田强[1] 

机构地区：[1]北京师范大学物理学系,北京100875

出　　处：《北京师范大学学报（自然科学版）》2014年第1期20-23,共4页Journal of Beijing Normal University(Natural Science)

基　　金：国家自然科学基金资助项目(10574011;10974017)

摘　　要：用分数维方法研究AlxGa1-x As衬底上GaAs薄膜中的极化子,得到了衬底中Al摩尔分数x对GaAs薄膜中极化子的结合能和有效质量的影响,极化子的结合能和有效质量的相对变化(mass shift)都随着Al摩尔分数的增大而单调增大;AlxGa1-x As衬底中Al摩尔分数对不同厚度的GaAs薄膜中极化子的影响程度不同,GaAs薄膜的厚度越小,衬底中Al摩尔分数对GaAs薄膜中极化子的影响越显著.Abstract Polaron in GaAs film deposited on AlxGa1-xAs As substrate were investigated within the framework of fractional-dimensional approach. Polaron binding energy and effective mass were influenced by aluminum concentration in AlxGa1-xAs substrate, polaron binding energy and mass shift monotonically increased with increasing aluminum concentration. Effects of aluminum concentration in AlxGa1-xAs suhstrate on polaron in different thickness of GaAs film were different, the smaller the thickness of GaAs film was, the more significant influence of aluminum concentration on polaron in GaAs film was.

关 键 词：极化子 GaAs薄膜 分数维 

分 类 号：O471.3[理学—半导体物理]