GaN基发光二极管衬底材料的研究进展  

Research progress of substrate materials used for GaN-Based light emitting diodes

作　　者：陈伟超[1,2] 唐慧丽[1] 罗平[1] 麻尉蔚 徐晓东[1] 钱小波[1] 姜大朋[1] 吴锋[1] 王静雅[1] 徐军[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海201800 [2]中国科学院大学,北京100049

出　　处：《物理学报》2014年第6期284-296,共13页Acta Physica Sinica

基　　金：上海市科委科技基金(批准号:13521102700);国家自然科学基金(批准号:61177037)资助的课题~~

摘　　要：GaN基发光二极管(LED)作为第三代照明器件在近年来发展迅猛.衬底材料作为LED制造的基础,对器件制备与应用具有极其重要的影响.本文分析综述了衬底材料影响LED器件设计与制造的关键特性(晶格结构、热胀系数、热导率、光学透过率、导电性),对比了几种常见衬底材料(蓝宝石、碳化硅、单晶硅、氮化镓、氧化镓)在高质量外延层生长、高性能器件设计和衬底材料制备方面的研究进展,并对几种材料的发展前景做出了展望.GaN-based light emitting diodes （LEDs） as the third generation of lighting devices, have been rapidly developed in recent years. Substrate materials, serving as the LED manufacturing basis, have great influences on the production and application of LED. The critical characteristics of substrate affecting the design and fabrication of LED are its crystal structure, thermal expansion coefficient, thermal conductivity, optical transmittance, and electrical conductivity. In this paper, we compare several common substrate materials, namely, sapphire, silicon carbide, silicon, gallium nitride and gallium oxide, review the research progress of the substrate materials in the aspects of high quality epitaxial growths, high performance device designs and preparations of substrates, and comment on their further development.

关 键 词：发光二极管 氧化镓 蓝宝石 碳化硅 

分 类 号：TN312.8[电子电信—物理电子学]