重离子在半导体器件中引起的单粒子效应  

Single Event Effects Induced by Heavy Ion in Semiconductor Device

作　　者：侯明东[1] 甄红楼[1] 张庆祥[1] 刘杰[1] 马峰[1] 

机构地区：[1]中国科学院近代物理研究所,甘肃兰州730000

出　　处：《原子核物理评论》2000年第3期165-170,共6页Nuclear Physics Review

基　　金：国家自然科学基金资助项目!(19775058);中国科学院"九五"重点项目!(KJ952-S1-423)

摘　　要：重离子引起的单粒子效应是威胁航天器安全的重要因素之一 ,利用加速器进行地面模拟是研究单粒子效应的重要手段 .概述了单粒子效应研究的历史和现状 ,讨论了单粒子效应研究的基本方法 ,最后简要介绍了在兰州重离子加速器上已开展的单粒子效应研究工作 .Single event effects (SEE ′s) have been observed in semiconductor device in space since 1975. It has been verified from many spaceflight tests that single event effect induced by cosmic ray is one of the important sources of anomalies and malfunctions of spacecraft. Initially, a brief outline of space radiation environment is given. The history and recent trends were described, and basic methods and necessary facilities for SEE testing were also discussed. Finally, the research activities on SEE at HIRFL (Heavy Ion Research Facility in Lanzhou) were presented.

关 键 词：单粒子效应 空间电子学 重离子 半导体器件 

分 类 号：V443[航空宇航科学与技术—飞行器设计]