Recent progress in ZnO-based heterojunction ultraviolet light-emitting devices  

Recent progress in ZnO-based heterojunction ultraviole light-emitting devices

作　　者：Yichun Liu Haiyang Xu Chunyang Liu Weizhen Liu 

机构地区：[1]Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University

出　　处：《Chinese Science Bulletin》2014年第12期1219-1227,共9页

基　　金：supported by the National Basic Research Program of China(2012CB933703);the National High Technology Research and Development Program of China(2006AA03Z311);the National Natural Science Foundation of China(51172041,91233204 and 51372035);the Program for New Century Excellent Talents in University(NCET-11-0615)

摘　　要：Wide bandgap(3.37 eV)and high excitonbinding energy of ZnO(60 meV)make it a promising candidate for ultraviolet light-emitting diodes(LEDs)and low-threshold lasing diodes(LDs).However,the difficulty in producing stable and reproducible high-quality p-type ZnO has hindered the development of ZnO p–n homojunction LEDs.An alternative strategy for achieving ZnO electroluminescence is to fabricate heterojunction devices by employing other available p-type materials(such as p-GaN)or building new device structures.In this article,we will briefly review the recent progress in ZnO LEDs/LDs based on p–n heterostructures and metal–insulatorsemiconductor heterostructures.Some methods to improve device efficiency are also introduced in detail,including the introduction of Ag localized surface plasmons and single-crystalline nanowires into ZnO LEDs/LDs.Wide bandgap （3.37 eV） and high exciton- binding energy of ZnO （60 meV） make it a promising candidate for ultraviolet light-emitting diodes （LEDs） and low-threshold lasing diodes （LDs）. However, the difficulty in producing stable and reproducible high-quality p-type ZnO has hindered the development of ZnO p-n homojunction LEDs. An alternative strategy for achieving ZnO electroluminescence is to fabricate heterojunction devices by employing other available p-type materials （such as p-GaN） or building new device structures. In this article, we will briefly review the recent progress in ZnO LEDs/ LDs based on p-n heterostructures and metal-insulatorsemiconductor heterostructures. Some methods to improve device efficiency are also introduced in detail, including the introduction of Ag localized surface plasmons and single-crystalline nanowires into ZnO LEDs/LDs.

关 键 词：紫外发光二极管 异质结器件 ZNO 光发射器件 表面等离子体激元 异质结构 氧化锌 激光二极管 

分 类 号：TN23[电子电信—物理电子学]