A review of GaN-based optoelectronic devices on silicon substrate  

作　　者：Baijun Zhang Yang Liu 

机构地区：[1]State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University

出　　处：《Chinese Science Bulletin》2014年第12期1251-1275,共25页

基　　金：supported by the National Basic Research Program of China (2010CB923200 and 2011CB301903);the National High Technology Research and Development Program of China (2011AA03A101);the National Natural Science Foundation of China (61274039 and 51177175);Ph.D. Programs Foundation of Ministry of Education of China (20110171110021);the Foundation of the Key Technologies R&D Program of Guangdong Province (2010A081002005)

摘　　要：Group Ⅲ-nitride material system possesses some unique properties,such as large spectrum coverage from infrared to deep ultraviolet,wide energy band gap,high electron saturation velocity,high electrical breakdown field,and strong polarization effect,which enables the big family has a very wide application range from optoelectronic to power electronic area.Furthermore,the successful growth of GaN-related III-nitride material on large size silicon substrate enable the above applications easily realize the commercialization,because of the cost-effective device fabrication on the platform of Si-based integrated circuits.In this article,the progress and development of the GaN-based materials and light-emitting diodes grown on Si substrate were summarized,in which some key issues regarding to the material growth and device fabrication were reviewed.Group III-nitride material system possesses some unique properties, such as large spectrum coverage from infrared to deep ultraviolet, wide energy band gap, high electron saturation velocity, high electrical breakdown field, and strong polarization effect, which enables the big family has a very wide application range from optoelectronic to power electronic area. Furthermore, the successful growth of GaN-related III-nitride material on large size silicon substrate enable the above applications easily realize the commercialization, because of the cost-effective device fabrication on the platform of Si-based integrated circuits. In this article, the progress and development of the GaN-based materials and light-emitting diodes grown on Si substrate were summarized, in which some key issues regarding to the material growth and device fabrication were reviewed.

关 键 词：光电子器件 硅衬底 GAN 综述 材料系统 材料生长 发光二极管 远紫外线 

分 类 号：TN36[电子电信—物理电子学]