Electrical properties of sulfur-implanted cubic boron nitride thin films  

作　　者：Xingwang Zhang Zhigang Yin Faitong Si Hongli Gao Xin Liu Xiulan Zhang 

机构地区：[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences

出　　处：《Chinese Science Bulletin》2014年第12期1280-1284,共5页

基　　金：supported by the National Basic Research Program of China(2012CB619306);the National Natural Science Foundation of China(61376007)

摘　　要：Cubic boron nitride(c-BN)thin films were deposited on Si substrates by applying ion beam assisted deposition and then doped by S ion implantation.To produce a uniform depth profile of S ions in c-BN films,the implantation was carried out for the multiple energies.A slight degradation of c-BN crystallinity resulted from ion implantation can be recovered by thermal annealing,keeping the cubic phase content as high as 92%.The resistance reduces from 1010X for the as-deposited c-BN film to 108X after an S implantation of 5 9 1014ions cm-2and annealing at 1,173 K,suggesting an electrical doping effect of S dopant.The electrical resistance of the S-doped c-BN thin film decreases with increasing temperature,indicating semiconductor characteristics.The activation energy of S dopant is estimated to be 0.28±0.01 eV from the temperature dependence of resistance.Cubic boron nitride （c-BN） thin fihns were deposited on Si substrates by applying ion beam assisted deposition and then doped by S ion implantation. To produce a uniform depth profile of S ions in c-BN films, the implantation was carried out for the multiple energies. A slight degradation of c-BN crystallinity resulted fi＇om ion implantation can be recovered by thermal annealing, keeping the cubic phase content as high as 92 %. The resistance reduces from 10^10Ω for the as-deposited c-BN film to 10^8Ω after an S implantation of 5 × 10^14 ions cm 2 and annealing at 1,173 K, suggesting an electrical doping effect of S dopant. The electrical resistance of the S-doped c-BN thin film decreases with increasing temperature, indicating semiconductor characteristics. The activation energy of S dopant is estimated to be 0.28 ±0.01 eV from the temperature dependence of resistance.

关 键 词：立方氮化硼薄膜 硫离子 电学性能 离子束辅助沉积 c-BN薄膜 离子注入 掺杂剂 半导体特性 

分 类 号：O484.42[理学—固体物理]