多晶硅化学气相沉积反应的三维数值模拟  

Three-dimensional Numerical Simulation of Chemical Vapor Deposition of Polysilicon

作　　者：夏小霞[1,2] 周乃君[1] 王志奇[2] 

机构地区：[1]中南大学能源科学与工程学院,长沙410083 [2]湘潭大学机械工程学院,湘潭411105

出　　处：《人工晶体学报》2014年第3期569-575,共7页Journal of Synthetic Crystals

基　　金：湖南省科技计划重点项目(2009GK2009);湖南省教育厅一般项目(12C0379)

摘　　要：建立了多晶硅化学气相沉积反应的三维模型，同时考虑质量、能量和动量传递，利用CFD软件对炉内的流动、传热和化学反应过程进行了数值模拟，并分析了硅沉积速率、SiHCl，转化率、硅产率以及单位能耗随H2摩尔分数的变化规律。结果表明：计算结果与文献数据吻合较好；随着硅棒高度的增加，硅沉积速率不断增大；最佳的进气H2摩尔分数范围为0．8～0．85。Three-dimensional model of chemical vapor deposition of polysilicon was established by considering mass, energy and momentum transfer simultaneously. Then CFD software was used to simulate flow, heat transfer and chemical reaction process in polysilicon reduction furnace and to analyze the change rule of silicon growth rate, SiHC13 conversion rate, silicon production rate and energy consumption with the H2 mole fraction in the inlet. The current model results agree well with the data given in the literatures. The results show that silicon deposition rate increases with the height of silicon rod. The optimal H2 mole fraction is about 0.8-0.85

关 键 词：多晶硅 化学气相沉积 数值模拟 沉积速率 

分 类 号：TK01[动力工程及工程热物理]