靶基距对磁控溅射AZO薄膜性能的影响  

Effects of target-to-substrate distance on properties of AZO films prepared by magnetron sputtering

作　　者：齐东丽[1] 马学军[1] 

机构地区：[1]沈阳理工大学理学院,辽宁沈阳110159

出　　处：《电子元件与材料》2014年第5期17-20,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.11004138);辽宁省杰出青年人才计划资助项目(No.LJQ2011020);沈阳理工大学青年教师科研启动基金资助项目(No.2012QN-05-08)

摘　　要：以氧化锌铝陶瓷靶（98％ZnO＋2％Al2O3，质量分数）为靶材，利用直流磁控溅射法在载玻片衬底上制备了AZO（ZnO：AI）薄膜样品，研究了靶基距（40～70mm）对所制备AZO薄膜微观结构及光电性能的影响。结果表明：不同靶基距下制备的薄膜均具有明显的c轴择优取向；随着靶基距的增加，所制AZO薄膜的结晶质量变好，结晶尺寸变大，电阻率降低，禁带宽度变小，且所有薄膜在可见光区的平均透过率均在80％以上。当靶基距为70ITlm时所制AZO薄膜的性能最好，其电阻率为8×10-4Ω·om，在可见光范围内的平均透过率为82．3％，禁带宽度为3．42eV。The AZO （ZnO： AI） thin films were prepared on the glass substrate by DC magnetron sputtering method using a ceramic target of 98%ZnO＋2%A1203 （mass fraction） as target. Target-to-substrate distance was in the range of 40--70 mm during deposition. The effects of target-to-substrate distance on microstructure and photoelectric properties of the films were investigated. The results show that the films prepared at different target-to-substrate distances all exhibit obvious c-axis preferred orientation. With the increasing of target-to-substrate distance, the crystallization quality of the prepared AZO thin films becomes better, the grain size increases, and the resistivity and band gap decreases. Meanwhile, the average transmittance of all the AZO thin films is over 80% in the visible region. The AZO thin film prepared at target-to-substrate distance of 70 mm possesses the best properties with the resistivity of 8×10--4Ω· cm, the average transmittance of 82.3% in the visible region and the band gap of 3.42 eV.

关 键 词：磁控溅射法 AZO薄膜 靶基距 禁带宽度 透过率 光电性能 

分 类 号：TN34[电子电信—物理电子学]