掺杂超晶格量子阱带内跃迁的量子力学描述  

Quantum Mechanics Description of Intraband Electronic Transition for Doped Superlattice Quantum Well

作　　者：李秀平[1] 杨杰[1] 王善进[1] 陈琼[1] 罗诗裕[1] 

机构地区：[1]东莞理工学院电子工程学院,广东东莞523808

出　　处：《半导体光电》2014年第2期263-265,270,共4页Semiconductor Optoelectronics

摘　　要：引入正弦平方势,把掺杂超晶格中电子的运动问题化为带有大参数的Schrodinger方程。利用WKB近似和Langer变换,找到了系统的本征值和本征函数,并计算了掺杂超晶格电子的带内跃迁。结果表明,电子在相邻能级之间的跃迁能量大约在毫电子伏量级,而相应频率位于太赫兹附近。By introducing the sine-squared potential, the electrons motion equation in the doped superlattice was reduced into the Schrodinger equation with a large parameter. By using WKB approximation and Langer transformation, the eigenvalues and eigenfunctions of the system were found, and the electronic transition was calculated. The results show that the transition energy of the electrons between the adjacent energy levels is roughly at meV in magnitude, and the corresponding frequencies are in the vicinity of THz.

关 键 词：掺杂超晶格 SCHRODINGER方程 Langer变换 电子跃迁 

分 类 号：O471.5[理学—半导体物理]