原子层沉积技术的发展现状及应用前景  

Latest Development and Application Prospects of Atomic Layer Deposition Technology

作　　者：魏呵呵 何刚[1] 邓彬[1] 李文东[1] 李太申 

机构地区：[1]安徽大学物理与材料科学学院,合肥230601

出　　处：《真空科学与技术学报》2014年第4期413-420,共8页Chinese Journal of Vacuum Science and Technology

摘　　要：随着微电子行业的发展,集成度不断提高、器件尺寸持续减小,使得许多传统微电子材料和科技面临巨大挑战,然而原子层沉积(ALD)技术作为一种优异的镀膜技术,因其沉淀的薄膜纯度高、均匀性及保行性好,还能十分精确地控制薄膜的厚度与成分,仍然备受关注并被广泛应用于半导体、光学、光电子、太阳能等诸多领域。本文简要介绍了ALD技术的原理、沉积周期、特征、优势、化学吸附自限制ALD技术和顺次反应自限制ALD技术及ALD本身作为一种技术的发展状况(T-ALD,PEALD和EC-ALD等);重点叙述了ALD技术在半导体领域(高k材料、IC互连技术等)、光学薄膜方面、纳米材料方面、催化剂的应用和新成果。最后,对ALD未来的发展应用前景进行了展望。latest development of atomic layer deposition （ALD）technology was tentatively reviewed. ALD has been widely used in fabrication of a variety of electronics chips, optical devices, sensors, and solar cells because ALD is capable of depositing highly pure homogenous films with well-controUed film thickness and chemical contents. The discus-lions focused on： i）the principle of ALD technology, its characteristics, and technical advantages; ii）the mechanisms of chemical self-limiting（CS）and response self-limiting（RS）, and possible ways to achieve ALD, such as thermal-ALD（T-ALD） ,plasma-enhanced ALD（PE-ALD）, electro chemical ALD（ EC-ALD）, and etc. ;iii）its applications in synthesis of high k materials, interconnecting materials for integrated circuit（IC）, nanostructured materials, optical films and catalysts. The development trends of ALD teclmology and its potential applications were also briefly discussed.

关 键 词：原子层沉积技术 薄膜沉积 高K材料 光学薄膜 催化剂 

分 类 号：O487[理学—固体物理]