GaN基雪崩光电二极管及其研究进展  

GaN-based avalanche photodiodes and its recent development

作　　者：刘福浩[1,2] 许金通[3,2] 王玲[3,2] 王荣阳[1,2] 李向阳[3,2] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 [2]中国科学院大学,北京100049 [3]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083

出　　处：《红外与激光工程》2014年第4期1215-1221,共7页Infrared and Laser Engineering

基　　金：国家自然科学基金(60907048);上海市自然科学基金(10ZR1434500)

摘　　要：越来越多的民用与军事对高灵敏度紫外探测的需求促进了GaN基雪崩光电二极管（APD）的快速发展。雪崩光电二极管工作在高反偏电压状态，器件内部载流子在高场下发生碰撞离化，从而使探测信号产生增益。首先对GaN基雪崩光电二极管的研究进展进行了回顾，然后重点报道了器件的增益最大可达3＆#215;105，介绍了本征层厚度与器件暗电流的关系，简单介绍了正在组建的基于相敏探测的交流增益测试系统，并研究了过剩噪声与调制频率之间的关系，发现在低频波段（30~2 kHz），过剩噪声呈现1/f噪声特性。最后，对盖革模式的雪崩光电二极管的研究进展及应用前景进行了简单介绍。The investigation of GaN-based avalanche photodiodes（APDs） was motivated by the demand of high sensitivity ultraviolet detectors in numerous civilian and military applications. APDs operate under high reverse bias voltage, and carriers in the device caused impact ionization under high electric fields, as a result, the avalanche multiplication could be obtained. In this paper, reviews were made on the development of GaN-based avalanche photodiodes, the largest value of gain in this work was nearly 3 ＆#215; 105. Relationship between width of the intrinsic layer and dark current has been studied. The measuring system based on phase sensitive detecting technique has been shown. Relationships between modulating frequencies and noise has also been investigated . It was found that in the range of low frequency （ 30-2 kHz）, the excess noise behaved as 1/f noise. In the end, the recent developments and applications of the Geiger mode operations of GaN-based APDs are introduced.

关 键 词：雪崩光电二极管 增益 暗电流 噪声 盖革模式 

分 类 号：TN23[电子电信—物理电子学]