基于标准工艺的抗单粒子数字单元设计方法  

Design Method for Single-Event-Hardened Cell Based on Standard Process

作　　者：冯小刚[1,2] 李儒章[2] 刘佳[2] 周前能[1] 谭智琴 徐辉[1,2] 刘明[2,3] 

机构地区：[1]重庆邮电大学,重庆400065 [2]模拟集成电路重点实验室,重庆400060 [3]重庆大学,重庆400044

出　　处：《微电子学》2014年第2期187-190,共4页Microelectronics

基　　金：重庆自然科学基金资助项目(cstcjjA40011);重庆教委科学技术研究项目(KJ120503)

摘　　要：基于0.18μm CMOS混合信号标准工艺,研究了一种抗单粒子数字单元的设计方法。采用的单粒子加固措施包括:在时序逻辑的电路结构中采用RC滤波结构;在版图结构中采用N+/P+保护环结构以及增加阱接触和衬底接触的通孔数目。以D触发器DFFX2为例,验证了其具有良好的单粒子加固性能。参照标准数字单元库设计流程,开发了一款抗单粒子数字单元库,并应用于高性能数据转换器项目中。Based on 0.18μm CMOS mixed-signal standard process,a method to design single-event-hardened cell was developed.In this technique,RC filtering structure was used for sequential logics,N＋/P＋guard-ring structure was employed in the layout,and number of vias was increased for well-and substrate-contacts.A D-type flip-flop DFFX2was designed to verify the effectiveness of the method.Spectre simulation showed that the DFFX2had good performance of single-event-hardness.Based on design flow of standard digital cell library,a single-event-hardened digital cell library was developed,which was then supplied to a high-performance data-converter.

关 键 词：单粒子效应 辐照加固 数字单元 

分 类 号：TN431.2[电子电信—微电子学与固体电子学]