少子产生寿命计算机辅助测量及应用的研究  

Study on the Computer-aided Measurement of Minority Carrier Generation Lifetime and Its Application

作　　者：丁扣宝[1] 张秀淼[2] 宋加涛[3] 

机构地区：[1]浙江大学西溪校区信息与电子工程学系,杭州310028 [2]浙江大学硅材料国家重点实验室,杭州310027 [3]宁波高等专科学校,315000

出　　处：《固体电子学研究与进展》2001年第1期87-91,共5页Research & Progress of SSE

摘　　要：研究了半导体材料少子产生寿命的计算机辅助测量 ,设计了相应的产生寿命 C- t瞬态测量系统 ,能实现从阶跃信号产生直到测量结果输出全过程的自动化 ,提高了测量速度和准确度。应用于传统的“Zerbst图”法 ,可在原理和数据处理两方面得到较大的改善。The computer aided measurement of generation lifetime has been studied, and a corresponding capacitance time ( C t ) transient measurement system has been designed. The system realizes the automation from the pulse signal generation to the output of results, and hence the velocity and accuracy of measurement have been greatly improved. Applied to the traditional “Zerbst plot” method, both the principal and the data process can be ameliorated.

关 键 词：少子产生寿命 计算机辅助测量 半导体材料 

分 类 号：TN304.07[电子电信—物理电子学]