Detecting the micro-defects in the GaAs materials by time resolved emissions  

作　　者：Zhongliang Pan Ling Chen Guangzhao Zhang Peiheng Wu 

机构地区：[1]School of Physics and Telecommunications Engineering,South China Normal University [2]Department of Electronics and Communications,Sun Yat-sen University [3]Research Institute of Superconductor Electronics,Nanjing University

出　　处：《Chinese Science Bulletin》2014年第16期1838-1844,共7页

基　　金：supported by the National Natural Science Foundation of China (61072028);the Project of Department of Education of Guangdong Province (2012KJCX0040);Guangdong Province and Chinese Ministry of Education Cooperation Project of Industry,Education and Academy (2009B090300339)

摘　　要：The GaAs material is a major semiconductor material,and it has high electron transfer rate and direct transition energy band structure.The devices and integrated circuits fabricated on the GaAs substrates have a lot of advantages such as high speed information processing.Small perturbations in the manufacturing of GaAs materials can lead to defects.The defects in the GaAs materials can degrade the performance of materials.A new method is presented in this paper for detecting the micro-defects in GaAs materials by using time resolved emissions.In this method,the micro-defects in GaAs materials are detected by making use of the photon emission features of microdefects.The strength of the emitted photons from the micro-defects is increased by applying the electric current or the periodic pulse signals to GaAs materials.The singlephoton detector is used to detect the photon emissions of the micro-defects.The time resolved photon emissions and single-photon detection are used to record and compare the amounts of the emitted photons that come from the given regions of the normal GaAs materials and the defective GaAs materials.A lot of experimental results show that the micro-defects in the GaAs materials can be detected by using the method proposed in this paper.The GaAs material is a major semiconductor material, and it has high electron transfer rate and direct transition energy band structure. The devices and inte-grated circuits fabricated on the GaAs substrates have a lot of advantages such as high speed information processing. Small perturbations in the manufacturing of GaAs materi-als can lead to defects. The defects in the GaAs materials can degrade the performance of materials. A new method is presented in this paper for detecting the micro-defects in GaAs materials by using time resolved emissions. In this method, the micro-defects in GaAs materials are detected by making use of the photon emission features of micro- defects. The strength of the emitted photons from the micro-defects is increased by applying the electric current or the periodic pulse signals to GaAs materials. The single-photon detector is used to detect the photon emissions of the micro-defects. The time resolved photon emissions and single-photon detection are used to record and compare the amounts of the emitted photons that come from the given regions of the normal GaAs materials and the defective GaAs materials. A lot of experimental results show that the micro-defects in the GaAs materials can be detected by using the method proposed in this paper.

关 键 词：砷化镓材料 微观缺陷 排放检测 时间分辨 排放量 GAAS衬底 光子发射 单光子探测 

分 类 号：TB302.5[一般工业技术—材料科学与工程]