碳化硅修饰碳糊电极测定汞离子  

Determination of Mercury Ion in Carbon Paste Electrode Modified by Silicon Carbide

作　　者：郭凌雁[1] 焦晨旭[1] 冯鹏青 戴虹[1] 

机构地区：[1]中北大学理学院,太原030051

出　　处：《材料导报》2014年第8期49-52,共4页Materials Reports

基　　金：山西省科技攻关基金(20120321016-01);煤转化国家重点实验室基金(J13-14-909)

摘　　要：制备了碳化硅修饰碳糊电极,利用循环伏安法,采用三电极体系测定汞离子的电化学行为.结果表明,以100 mV/s的扫描速度测定pH值为2.33的BR缓冲溶液中的Hg2＋时,在0.575 V左右出现一个特征吸收峰,峰电压与Hg^2＋浓度在1.0×10^-7～1.0×10^-4 mol/L范围内可呈良好的线性关系,相关系数为0.9971,检出限为3.7×10^-8 mol/L,连续测定2周,电极表现出较好的稳定性.Carbon paste electrode modified by silicon carbide were prepared.Determination of mercury ions was conducted in the three-electrode system by cyclic voltammetry.Hg2＋ was measured with cyclic voltammetry at the scanning speed of 100 mV/s in BR buffer solution in which the pH is 2.33.The characteristic absorption peak which has a good peak shape appears at 0.575 V.There is a good linear relationship between peak voltage and concentration of mercury ion which is in 1.0× 10^-7 mol/L to 1.0× 10^-4 mol/L.The correlation coefficient is 0.9971,the detection limit is 3.7 × 10^-8 mol/L.During continuous determination of two weeks,the electrode shows good stability.

关 键 词：碳糊电极 碳化硅 汞(Ⅱ) 循环伏安法 

分 类 号：O657.1[理学—分析化学]