GaN基SBD功率器件研究进展  

Research Progresses on GaN-Based Schottky Barrier Diode Power Devices

作　　者：李迪[1] 贾利芳[1] 何志[1] 樊中朝[1] 王晓东[1] 杨富华[1] 

机构地区：[1]中国科学院半导体研究所半导体集成技术工程研究中心,北京100083

出　　处：《微纳电子技术》2014年第5期277-285,296,共10页Micronanoelectronic Technology

基　　金：国家高技术研究发展计划(863计划)资助项目(2014AA032302);国家重点基础研究发展计划(973计划)资助项目(2012CB934204);国家自然科学基金资助项目(61076077;61274066);北京市科技计划资助项目(Z13110300590000)

摘　　要：作为第三代宽禁带半导体器件,GaN基肖特基势垒二极管(SBD)功率器件具有耐高温、耐高压和导通电阻小等优良特性,在功率器件方面具有显著的优势。概述了基于功率应用的GaN SBD功率器件的研究进展。根据器件结构,介绍了基于材料特性的GaN SBD和基于AlGaN/GaN异质结界面特性的GaN异质结SBD。根据器件结构对开启电压的影响,对不同阳极结构器件进行了详细的介绍。阐述了不同的肖特基金属的电学特性和热稳定性。分析了表面处理,包括表面清洗、表面等离子体处理和表面钝化对器件漏电流的影响。介绍了终端保护技术,尤其是场板技术对击穿电压的影响。最后探讨了GaN基SBD功率器件未来的发展趋势。As the third generation of the wide gap semiconductor devices,GaN schottky barrier diode（SBD）power devices have excellent characteristics of high temperature resistance,high voltage resistance and low on-resistance,and significant advantages in the aspect of the power devices.The research progresses of the GaN SBD power devices based on the power applications are summarized.According to the device structures,GaN SBD based on the material properties and GaN heterojunction SBD based on the interface characteristic of the AlGaN/GaN heterojunction are introduced.Based on the effects of the structures on the turn-on voltage of the devices, the devices with different anode structures are introduced in detail.The electrical properties and thermostabilities of different Schottky metals are expounded.The effects of the surface treatments on the leakage current of the devices are analyzed,including the surface cleaning,plasma surface treatment and surface passivation.The terminal protection technology is introduced,especially the effects of the field plate technology on the breakdown voltage.Finally,the future development tendency of the GaN-based SBD power devices is discussed.

关 键 词：氮化镓 肖特基势垒二极管(SBD) 功率器件 肖特基金属 漏电流 等离子体处理 

分 类 号：TN311.7[电子电信—物理电子学] TN313.4