相变材料等离子体刻蚀的研究进展  

Research Development of the Plasma Etching for Phase Change Materials

作　　者：李俊焘 刘波[1] 宋志棠[1] 冯高明 朱南飞 任佳栋 封松林[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 [2]中国科学院大学,北京100049 [3]中芯国际集成电路制造公司,上海201203

出　　处：《微纳电子技术》2014年第5期315-323,共9页Micronanoelectronic Technology

基　　金：国家重点基础研究发展计划资助项目(2010CB934300;2013CBA01900;2011CBA00607;2011CB932804);中国科学院先导类专项资助项目(XDA09020402);国家集成电路重大专项资助项目(2009ZX02023-003);国家自然科学基金资助项目(61076121;61176122;61106001;61261160500;61376006);上海市科委资助项目(12nm0503701;13DZ2295700)

摘　　要：首先综述了相变材料等离子体刻蚀技术的研究进展,然后讨论了影响相变材料等离子体刻蚀的主要工艺参数,如线圈功率、腔体气压、偏压、刻蚀气体及气体比例等,进而解释了工艺参数与刻蚀结果的依赖关系。同时采用多种分析手段,对相变材料在等离子体刻蚀工艺中产生的刻蚀损伤进行了分类和表征,并基于该分析结果提出了工艺优化方案。最后总结了相变材料等离子体刻蚀技术的反应机理,相变材料的刻蚀是自发反应与离子辅助化学反应相结合的过程,同时物理溅射与低挥发性产物的离子激发脱附也起着重要的辅助作用。The research development of the plasma etching technology for phase change materials is reviewed firstly.The main process parameters,such as the coil power,cavity pressure,bias voltage,etching gas and gas ratio influencing the phase change material etching are discussed, and then the dependency relationships of process parameters and etch results are explained.In addition,the etch damages of the phase change material in the plasma etching process are categorized and characterized by using various analysis methods,and the process optimization is put forward based on these analysis results.Finally,the reaction mechanism of the plasma etching technology for phase change materials is summarized.The plasma etching of phase change materials is a combination of the spontaneous reaction and ion-assisted chemical reaction.At the same time, the physical sputtering and ion-stimulated desorption of low volatile reaction products also play important supplementary roles.

关 键 词：等离子体刻蚀 相变材料 相变存储器(PCM) Ge2Sb2Te5 刻蚀损伤 刻蚀机理 

分 类 号：TN305.7[电子电信—物理电子学]