一种新型的自对准源漏接触技术  

A Novel Self-Aligned Source/Drain Contact Technology

作　　者：张琴[1] 洪培真[1] 崔虎山[1] 卢一泓[1] 贾宬 钟汇才[1] 

机构地区：[1]中国科学院微电子研究所集成电路先导工艺研发中心,北京100029

出　　处：《微纳电子技术》2014年第5期328-332,共5页Micronanoelectronic Technology

基　　金：国家科技重大专项资助项目(Y0GZ28X003)

摘　　要：提出了一种用于亚微米尺寸以下MOSFET器件的自对准源漏接触技术。这种新型的集成方法改变了传统的工艺步骤,即光刻接触孔,然后向里填充导电材料。在形成栅极、绝缘介质侧墙以及自对准金属硅化物以后,通过沉积金属膜层,并各向异性刻蚀以在绝缘介质侧墙两旁形成一对金属的侧墙结构。这个侧墙连接底部的源漏区和上部的互联区,作为底层的金属接触引出。这个方法不仅减小了刻蚀接触孔的难度,且采用自对准的方法形成金属接触也减小了源漏接触的距离,提高了集成度。这项工艺集成技术尝试应用于0.5μm栅长MOSFET器件结构中,并仿真得到了良好的电学性能。A self-aligned source/drain contact technology was presented for MOSFET devices below the submicron.This novel integration method changes the traditional process steps,i.e. etching contact holes and then the conductive materials are filled in.After the formations of the gate,dielectric spacer and salicide,apair of metal spacer structures was formed on both sides of the dielectric spacer through metal film deposition and anisotropic etching.The spacer served as the bottom metal contacts connecting the bottom source/drain regions and upper interconnection regions.The method reduces the difficulty of etching contact holes.The metal contact fabricated by the self-aligned method also reduces the distance of the source/drain contact and improves the integration.The process integration technology is tried to use in the MOSFET device with 0.5μm of the gate length and the good electrical performances are gotten by the simulation.

关 键 词：自对准源漏接触 金属侧墙 集成度 亚微米 前栅工艺 后栅工艺 

分 类 号：TN305.6[电子电信—物理电子学] TN305.7