CMP工艺参数对TiO_2薄膜去除速率的影响  

Effects of Process Parameters in the Chemical Mechanical Polishing on the Removal Rate of TiO_2 Thin Films

作　　者：李彦磊[1] 段波[2] 周建伟[2] 杨瑞霞[1] 牛新环[2] 

机构地区：[1]河北工业大学信息工程学院,天津300401 [2]河北工业大学微电子研究所,天津300130

出　　处：《微纳电子技术》2014年第5期337-340,共4页Micronanoelectronic Technology

基　　金：河北省自然科学基金资助项目(E2013202247);河北省教育厅基金资助项目(2011128)

摘　　要：在TiO2薄膜化学机械抛光(CMP)加工过程中,TiO2薄膜的材料去除速率(MRR)非常重要。对抛光工艺参数进行了优化研究,CMP实验采用自主配制的碱性抛光液对TiO2进行抛光,研究了抛光压力、抛光液流量、抛光头转速和抛光盘转速对材料去除速率的影响。实验结果表明:在抛光压力为1 psi(1 psi=6 895 Pa)、抛光液流量为250 mL/min、抛光头转速为87 r/min、抛光盘转速为80 r/min的工艺条件下,TiO2薄膜去除速率达到61.2 nm/min,既节约了成本又保证了较高的材料去除速率。The material removal rate（MRR）of TiO2thin films plays a vital role in the chemical mechanical polishing（CMP）manufacturing process of TiO2thin films.The optimization of the polishing process parameters was investigated.The TiO2thin films were polished with the selfmade alkaline slurry in the CMP experiment.And the effects of the poli-shing pressure,slurry flow rate,polishing head rotation speed and polishing plate rotation speed on the material removal rate were studied.The experimental results show that when the polishing pressure is 1 psi（1 psi= 6 895 Pa）,the slurry flow rate is 250 mL/min,the polishing head rotation speed is 87 r/min and the polishing plate rotation speed is 80 r/min,the removal rate of TiO2thin films reaches 61.2 nm/min,i.e.a higher MRR can be obtained and the cost is reduced greatly.

关 键 词：TIO2薄膜 去除速率 压力 流量 抛光头转速 抛光盘转速 

分 类 号：TN305.2[电子电信—物理电子学]