SiO_2/CeO_2复合磨粒的制备及在蓝宝石晶片抛光中的应用  

Preparation of nano SiO_2/CeO_2 composite particles and their applications to CMP on sapphire substrates

作　　者：白林山[1] 熊伟[1] 储向峰[1] 董永平[1] 张王兵[1] 

机构地区：[1]安徽工业大学化学与化工学院,安徽马鞍山243002

出　　处：《光学精密工程》2014年第5期1289-1295,共7页Optics and Precision Engineering

基　　金：国家自然科学基金资助项目(No.50975002);安徽工业大学创新团队项目(No.TD201204);教育部高校留学回国人员科研项目;安徽工业大学研究生创新基金资助项目(No.2012029)

摘　　要：采用均相沉淀法制备了SiO2/CeO2复合磨料,并利用X射线衍射仪(XRD)、透射电子显微镜(TEM)、傅里叶变换红外光谱仪(FT-IR)等对样品的相组成和形貌进行了表征。将所制备的SiO2/CeO2复合磨料用于蓝宝石晶片的化学机械抛光,利用原子力显微镜检测抛光后的蓝宝石晶片表面粗糙度。结果表明:所制备的SiO2/CeO2复合磨粒呈球形,粒径在40-50nm;在相同条件下,经过复合磨料抛光后的蓝宝石晶片表面粗糙度为0.32nm,材料去除速率为16.4nm/min,而SiO2抛光后的蓝宝石晶片表面粗糙度为0.92nm,材料去除速率为20.1nm/min。实验显示,复合磨料的材料去除速率略低于单一SiO2磨料,但它获得了较好的表面质量,基本满足蓝宝石作发光二极管(LED)衬底的工艺要求。SiO2/CeO2composite abrasives were synthesized by homogenous precipitation method.The phase composition and morphology of the as-prepared composite nano-spheres were characterized by a X-ray Diffractomer（XRD）,a Transmission Electron Microscopy（TEM）,and a Fourier Transfer Infrared（FT-IR）spectrometer. The as-prepared composite nano-spheres were used as polishing abrasives for Chemical Mechanical Polishing（CMP）of a sapphire substrate,then the surface roughness of sapphire substrate after polishing with the composite abrasive slurry was measured by a Atomic Force Microscopy（AFM）.The results show that the average roughness of the polished sapphire substrate is 0.32nm and the material removal rate is 16.4nm/min for composite abrasives,however,those are 0.92nm and 20.1nm/min for SiO2abrasive.It demonstrates that the material removal rate of composite abrasives is less than that of the SiO2,but it has a good surface quality.These results mean that the SiO2/CeO2composite satisfies the technical requirements for sapphire Light Emission Diode（LED）substrates.

关 键 词：蓝宝石晶片 化学机械抛光 表面粗糙度 SiO2/CeO2 复合磨料 

分 类 号：TN305.2[电子电信—物理电子学]