退火温度对N掺杂MgZnO薄膜光电性能的影响  

Effect of Annealing Temperature on the Optical and Electrical Properties of N Doped MgZnO Films

作　　者：高丽丽[1] 徐莹[2] 刘力[1] 张淼[1] 

机构地区：[1]北华大学物理学院,吉林吉林132013 [2]吉林大学物理学院,长春130012

出　　处：《吉林大学学报（理学版）》2014年第3期578-582,共5页Journal of Jilin University:Science Edition

基　　金：吉林省教育厅"十二五"科学技术研究项目(批准号:2013189)

摘　　要：采用射频磁控溅射技术,用氮气作为掺杂源,在石英基片上生长N掺杂MgxZn1-xO薄膜,并将薄膜分别在550,600,650,700℃真空中进行热退火处理.结果表明:晶体质量随退火温度的升高而提高;薄膜中Mg和Zn的原子比发生了变化;Raman光谱中位于272,642cm-1处的振动峰逐渐消失;室温光致发光光谱中薄膜的紫外激子发射峰变强,且发生峰移;随着退火温度的升高,薄膜的导电类型发生转变,当退火温度为600℃时,薄膜呈最佳的p型导电性质.Based on pure nitrogen gas as dopant,N doped MgxZn1-xO films were deposited on quartz substrates by radio frequency magnetron sputtering,which were subsequently annealed at 550,600, 650,700℃,respectively,under 10-4 Pa.The effects of annealing temperatures on the photoelectric properties of N doped MgZnO films were studied.When the annealing temperature increased,the crystallinity of films was improved,the atomic ratio of Mg and Zn changed,the intensity of ultraviolet exciton emitting peaks increased and exhibited shift in room photoluminescence spectra,the Raman peaks at 272and 642cm-1 disappeared,and the conductivity of the films changed.Having been annealed at a temperature of up to 600 ℃,the MgZnO ∶ N film exhibits the best p-type conductivity.

关 键 词：射频磁控溅射 MgZnO薄膜 N掺杂 快速热退火 

分 类 号：O472[理学—半导体物理]