LPCVD背封片表面颗粒问题研究  

Study on Problem of LPCVD Back-seal Silicon Wafer Surface Particle

作　　者：高丹[1] 佟丽英[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工艺技术》2014年第3期170-172,共3页Electronics Process Technology

基　　金：国家部委基金资助项目

摘　　要：采用LPCVD工艺对硅片背封SiO2薄膜,可以有效地防止外延工序中的自掺杂效应,消除杂质对外延工艺的不利影响。但是当背封好的硅片经抛光放置后,抛光面有亮点,并且随着时间的推移越来越多,严重影响了外延片质量。通过对比不同工艺条件下背封片表面情况,分析了表面颗粒的形成机理以及影响表面颗粒产生的因素。通过调整工艺参数,基本解决了背封片表面颗粒问题,明显改善了表面质量。Deposition of silicon dioxide on the back of wafer using LPCVD technology, can effectively prevent the autodoping effect and eliminate adverse effects of impurities in epitaxial process. But when a back-sealed silicon wafer is polished, the polished surface has a light spot and increases over time, which seriously affects the quality of wafer. Focuse comparing the quality of the back surface by different process conditions and elaborates the mechanism and the factors affecting the quality of the back surface. By adjusting process parameters, the problem of particles existing on the back is solved and the quality of the wafer surface is enhanced.

关 键 词：低压化学气相淀积 颗粒 二氧化硅 

分 类 号：TN305[电子电信—物理电子学]