改善金属电极表面状态的工艺研究  

Process Research of Improving Gold Electrode Surface State

作　　者：霍彩红[1] 刘相伍 

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《电子工艺技术》2014年第3期173-174,186,共3页Electronics Process Technology

摘　　要：主要讨论了半导体芯片的电镀工艺、金属刻蚀工艺对金属电极表面状态的影响。试验发现,电镀工艺中的电流密度、pH值和刻蚀工艺中的刻蚀方法对金属电极的表面状态有很大影响。通过优化此两个工艺,得到以下结论:当采用小电流密度、高pH值、干法刻蚀加湿法腐蚀的刻蚀方法时,能改善以金为主体的金属电极表面状况,电镀后得到粗细均匀的镀金层,刻蚀后表面没有残留物,大大提高了半导体芯片的镜检成品率。The influence of the plating and the etching on the surface state of the gold electrode has been discussed. The influences of the current density, the pH and the etching method on the surface state of the gold electrode are tremendous based on the experiments. By optimizing the plating process conditions and the etching conditions, when the low current density, high pH, dry etching and wet etching were used, the results show that the surface state of the gold electrode has been improved. The product yield of mirror checking has been improved.

关 键 词：电镀 PH 电流密度 表面状态 刻蚀 

分 类 号：TN305[电子电信—物理电子学]