中频磁控溅射制备锰铜传感器用合金薄膜的工艺  

Alloy Films for Manganin Ganges Prepared by Mid-Frequency Magnetron Sputtering

作　　者：张延松[1] 牟宗信[2] 吴敏[1] 丁昂[1,2] 牟晓东[2] 钱坤明[1] 

机构地区：[1]中国兵器科学研究院宁波分院,浙江宁波315103 [2]大连理工大学三束材料改性教育部重点实验室,辽宁大连116024

出　　处：《稀有金属》2014年第3期427-431,共5页Chinese Journal of Rare Metals

基　　金：中国兵器工业集团总公司兵器预研支撑基金项目(62301110702)资助

摘　　要：利用镀膜技术制作锰铜传感器,可以实现传感器的超薄化,提高传感器的灵敏度和线性度。改变溅射功率参数,采用中频磁控溅射技术在玻璃(SiO2)衬底上制备出一系列锰铜镍合金薄膜,重点研究沉积条件对薄膜式锰铜传感器薄膜结构、表面形貌等性能的影响。采用三维形貌仪测试薄膜厚度和计算沉积速率;采用原子力显微镜(AFM)研究薄膜的表面特征;采用X射线衍射(XRD)分析了热处理前后薄膜的微观结构;并采用直读光谱仪(DRS)测试溅射靶材和薄膜的成分。研究结果表明:沉积速率随溅射功率增加而增加,溅射功率达到1 kW后沉积速率保持在100 nm·min-1;溅射功率也会明显的影响薄膜的表面形貌,薄膜的表面粗糙度RMS随溅射功率的增加而减小;XRD分析结果表明溅射功率对薄膜的微观结构影响不大,样品的微观结构在热处理前后没有显著变化,只是热处理后样品观察到了微弱的Mn微观结构取向;溅射功率变化对薄膜的成分影响较小,不同功率沉积的薄膜样品的成分相近。Thin film manganin sensor produced by coating technology was able to achieve sensor with ultra-thin property, as well as higher sensitivity and linearity index. In this paper, a series of Mn-Cu alloy thin films were deposited by middle frequency pulsed magnetron sputtering on SiO2 substrates at various sputtering power conditions, in order to study the dependences of the film manganin sensor properties such as deposition rate, composition, microstructure and morphology on deposition conditions. The thickness of Mn-Cu alloy thin films was measured by a three-dimensional topography and by which the deposition rate was deduced, the morphology was observed by atomic force microscopic （AFM）, the microstructure before and after anneal treatment was tested by glancing incident X-ray diffraction （XRD） method, the composition of sputtering target and the films was measured by direct reading spectrometer analysis （DRS）. The results showed that deposition rate increased with sputtering power increasing, and the deposition rate could achieve 100 nm ~ min-l when sputtering power reached up to 1 kW or so, the sputtering power was able to significantly affect the film surface roughness （RMS）, which decreased with the increase of sputtering power, the microstructure characterization by glancing incident XRD showed that changing sputtering power had little effect on the microstructure of thin films, no significant microstructure change of the sample before and after annealing treatment could be observed besides tiny pattern from Mn body center structure presenting after annealing treatment. Changing sputtering power had little impact on film composition, moreover, the film composition was close to the target com- position and the film composition consistency was satisfied in the deposition.

关 键 词：锰铜合金 溅射功率 形貌 磁控溅射 

分 类 号：O484.4[理学—固体物理]