热屏位置对直拉硅单晶V/G、点缺陷和热应力影响的模拟  

Simulation on Effect of Heat Shield Position on the V/G and Point Defect and Thermal Stress of Gzochralski Silicon

作　　者：张向宇[1,2] 关小军[1,2] 潘忠奔[2] 张怀金[2] 曾庆凯[1] 王进[1,2] 

机构地区：[1]山东大学材料科学与工程学院,济南250061 [2]山东大学晶体材料国家重点实验室,济南250100

出　　处：《人工晶体学报》2014年第4期771-777,共7页Journal of Synthetic Crystals

基　　金：山东大学晶体材料国家重点实验室开放课题(KF1303)

摘　　要：为了研究热屏位置对200 mm直拉硅单晶V/G、原生点缺陷浓度场以及热应力场的影响,使用CGSim有限元模拟软件进行了系统模拟。结果表明:热屏位置对硅单晶的V/G和原生点缺陷浓度的径向分布规律没有影响;较热屏至晶体侧表面距离相比,其底端至熔体表面距离的影响更大,即随着它的增加,V/G值沿径向普遍增大且由内向外变化程度增强,晶体心部高浓度空位区扩大,最大热应力减小。合理控制热屏底端至熔体表面的距离可有效改善晶体质量。A set of finite element simulations in Czochralski（Cz） furnace for 200 mm silicon single crystals have been performed to investigate the effect of heat shield position on V / G,grown-in defects and thermal stress field. The result shows that the position of heat shield has little effect on V / G and grown-in defects radial distribution,the axial position of heat shield has much bigger impact on crystal compared with its radial position. That is,as the distance between heat shield and melt increasing,V / G curve moves up and its slop gets bigger along radial direction,the void zone expands and the maximum thermal stress decreases at the same time. Silicon crystal quality could be improved by reasonable control of the axial distance between heat shield and melt.

关 键 词：直拉硅单晶 有限元 热屏位置 原生点缺陷 热应力 

分 类 号：O77[理学—晶体学]