PICTS测试CdZnTe晶体中深能级缺陷  

Photo-Induced Current Transient Spectroscopy( PICTS) of Deep Level Defects in CdZnTe Crystal

作　　者：滕家琪[1] 闵嘉华[1] 梁小燕[1] 周捷[1] 张涛[1] 时彬彬[1] 杨升[1] 曾李骄开 

机构地区：[1]上海大学电子信息材料系,上海200072

出　　处：《人工晶体学报》2014年第4期829-833,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(11275122);上海市科委重点项目(11530500200);上海市教育委员会科研创新项目(12ZZ096)

摘　　要：详细阐述了光生电流瞬态谱(PICTS)的原理、结构和搭建过程,其中搭建过程中采用的激光器波长为730nm,功率为50 mW,测试温度范围在液氮温度至常温之间。利用低压垂直布里奇曼法制备了掺In的CdZnTe晶体样品,采用PICTS研究了样品中的主要缺陷能级,确定了能级位置在0.471 eV和0.15 eV的两个深中心,这两个缺陷分别可能是V2-Cd和A中心(In+Cd-V2-Cd)-。This paper expounded the principle and the structure of photo-induced current transient spectroscopy（PICTS） methods. What’s more,the process of building this device was explained here. We employed incident excitation light of λ = 730 nm and P = 50 mW. The temperature during the process of testing was from 80 K to 300 K. Samgples with In dopant concentrations were grown by low pressure vertical Bridgeman method. PICTS was used to study major defects in high resistivity In-doped CZT crystal. Two deep level centers had been revealed in the ternary compound studied,with energy levels of 0. 471 and 0. 15 eV,representing probably the energy level of V2-Cdand（In＋ Cd-V2-Cd）-.

关 键 词：PICTS CDZNTE 深能级 缺陷 

分 类 号：TB34[一般工业技术—材料科学与工程]